Civil society and crisis : Culture, discourse, and the Rodney King beating : The construction of meaning = The reconstruction of meaningJACOBS, R. N.American journal of sociology. 1996, Vol 101, Num 5, pp 1238-1272, issn 0002-9602Article

Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe DepositionBENSON, J. D; BUBULAC, L. O; CHEN, Y et al.Journal of electronic materials. 2014, Vol 43, Num 11, pp 3993-3998, issn 0361-5235, 6 p.Article

Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared DetectorsJAIME-VASQUEZ, M; JACOBS, R. N; BENSON, J. D et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 951-957, issn 0361-5235, 7 p.Conference Paper

Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si HeterostructuresJACOBS, R. N; SMITH, P. J; MARKUNAS, J. K et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 1036-1042, issn 0361-5235, 7 p.Conference Paper

Romance, irony, and solidarity = Romance, ironie et solidaritéJACOBS, R. N; SMITH, P.Sociological theory. 1997, Vol 15, Num 1, pp 60-80, issn 0735-2751Article

Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic AnnealingJAIME-VASQUEZ, M; JACOBS, R. N; NOZAKI, C et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2975-2980, issn 0361-5235, 6 p.Conference Paper

Structural Analysis of CdTe Hetero-epitaxy on (211) SiBENSON, J. D; JACOBS, R. N; MARKUNAS, J. K et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1231-1236, issn 0361-5235, 6 p.Conference Paper

Effects of a-Si:H resist vacuum-lithography processing on HgCdTeJACOBS, R. N; ROBINSON, E. W; JAIME-VASQUEZ, M et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1474-1480, issn 0361-5235, 7 p.Conference Paper

TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B SubstratesJAE JIN KIM; JACOBS, R. N; ALMEIDA, L. A et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3142-3147, issn 0361-5235, 6 p.Conference Paper

The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic AnnealingLENNON, C. M; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3344-3348, issn 0361-5235, 5 p.Conference Paper

Development of MBE II―VI Epilayers on GaAs(211)BJACOBS, R. N; NOZAKI, C; BILLMAN, C et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2707-2713, issn 0361-5235, 7 p.Conference Paper

High-Quality (211)B CdTe on (211 )Si Substrates Using Metalorganic Vapor-Phase EpitaxyRAO, S. R; SHINTRI, S. S; MARKUNAS, J. K et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1790-1794, issn 0361-5235, 5 p.Conference Paper

Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si SubstratesRAO, S. R; SHINTRI, S. S; MARKUNAS, J. K et al.Journal of electronic materials. 2010, Vol 39, Num 7, pp 996-1000, issn 0361-5235, 5 p.Conference Paper

Race, media and civil society = Race, média et société civileJACOBS, R. N.International sociology. 1999, Vol 14, Num 3, pp 355-372, issn 0268-5809Article

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate SubstratesBENSON, J. D; BUBULAC, L. O; BRILL, G et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3217-3223, issn 0361-5235, 7 p.Conference Paper

Growth and Analysis of HgCdTe on Alternate SubstratesBENSON, J. D; BUBULAC, L. O; CHEN, Y et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2971-2974, issn 0361-5235, 4 p.Conference Paper

Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic EllipsometryLENNON, C. M; ALMEIDA, L. A; JACOBS, R. N et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2965-2970, issn 0361-5235, 6 p.Conference Paper

Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer LayersMARKUNAS, J. K; JACOBS, R. N; SMITH, P. J et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1809-1814, issn 0361-5235, 6 p.Conference Paper

Topography and Dislocations in (112)B HgCdTe/CdTe/SiBENSON, J. D; SMITH, P. J; BRILL, G et al.Journal of electronic materials. 2009, Vol 38, Num 8, pp 1771-1775, issn 0361-5235, 5 p.Conference Paper

Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substratesJACOBS, R. N; MARKUNAS, J; PELLEGRINO, J et al.Journal of crystal growth. 2008, Vol 310, Num 12, pp 2960-2965, issn 0022-0248, 6 p.Article

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe SensorsJAIME-VASQUEZ, M; MARTINKA, M; STOLTZ, A. J et al.Journal of electronic materials. 2008, Vol 37, Num 9, pp 1247-1254, issn 0361-5235, 8 p.Conference Paper

Nucleation of ZnTe on the As-terminated Si(112) surfaceJAIME-VASQUEZ, M; MARTINKA, M; JACOBS, R. N et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 905-909, issn 0361-5235, 5 p.Conference Paper

In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layersJAIME-VASQUEZ, M; MARTINKA, M; JACOBS, R. N et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1455-1460, issn 0361-5235, 6 p.Conference Paper

Processing and characterization of a-Si:H photoresists for a vacuum-compatible photolithography processJACOBS, R. N; STOLTZ, A. J; ROBINSON, E. W et al.Journal of electronic materials. 2004, Vol 33, Num 6, pp 538-542, issn 0361-5235, 5 p.Conference Paper

Analysis of thermal cycle-induced dislocation reduction in HgCdTe/CdTe/ Si(211) by scanning transmission electron microscopyJACOBS, R. N; BENSON, J. D; STOLTZ, A. J et al.Journal of crystal growth. 2013, Vol 366, pp 88-94, issn 0022-0248, 7 p.Article